Enhanced Luminescence Properties of InAs-InAsP Core-Shell Nanowires
Identifieur interne : 000D58 ( Main/Repository ); précédent : 000D57; suivant : 000D59Enhanced Luminescence Properties of InAs-InAsP Core-Shell Nanowires
Auteurs : RBID : Pascal:14-0035687Descripteurs français
- Pascal (Inist)
- Luminescence, Propriété optique, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Structure coeur couche, Nanofil, Nanomatériau, Bande interdite, Propriété électronique, Nanophotonique, Spectre IR, Recombinaison superficielle, Phosphore, Effet contrainte, Elargissement raie, Largeur raie, Mécanisme croissance, Microscopie électronique balayage transmission, Relaxation contrainte, Propriété mécanique, Confinement, Recombinaison non radiative, Interface, 7867, 8107V, 8107B, 7321, Structure coeur coque.
- Wicri :
- concept : Phosphore.
English descriptors
- KwdEn :
- Confinement, Core shell structure, Electronic properties, Energy gap, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Infrared spectra, Interfaces, Line broadening, Line widths, Luminescence, Mechanical properties, Nanophotonics, Nanostructured materials, Nanowires, Non radiative recombination, Optical properties, Phosphorus, Scanning transmission electron microscopy, Stress effects, Stress relaxation, Surface recombination.
Abstract
Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising from nonradiative surface and Auger recombination. Here, we demonstrate up to ˜102 times enhancements of the emission intensities from InAs NWs by growing an InAsP shell to produce core-shell NWs. By systematically varying the thickness and phosphorus (P)-content of the InAsP shell, we demonstrate the ability to further tune the emission energy via large strain-induced peak shifts that already exceed > 100 meV at comparatively low fractional P-contents. Increasing the P-content is found to give rise to additional line width broadening due to asymmetric shell growth generated by a unique transition from {110}- to {112}-sidewall growth as confirmed by cross-sectional scanning transmission electron microscopy. The results also elucidate the detrimental effects of plastic strain relaxation on the emission characteristics, particularly in core-shell structures with very high P-content and shell thickness. Overall, our findings highlight that enhanced mid-infrared emission efficiencies with effective carrier confinement and suppression of nonradiative recombination are highly sensitive to the quality of the InAs-InAsP core-shell interface.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced Luminescence Properties of InAs-InAsP Core-Shell Nanowires</title><author><name sortKey="Treu, Julian" uniqKey="Treu J">Julian Treu</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Bormann, Michael" uniqKey="Bormann M">Michael Bormann</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Schmeiduch, Hannes" uniqKey="Schmeiduch H">Hannes Schmeiduch</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Doblinger, Markus" uniqKey="Doblinger M">Markus Doblinger</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Chemistry, Ludwig-Maximilians-Universität München</s1><s2>Munich 81377</s2><s3>DEU</s3><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region><settlement type="city">Munich</settlement></placeName><orgName type="university">Université Louis-et-Maximilien de Munich</orgName></affiliation></author><author><name sortKey="Morkotter, Stefanie" uniqKey="Morkotter S">Stefanie Morkötter</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Matich, Sonja" uniqKey="Matich S">Sonja Matich</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Wiecha, Peter" uniqKey="Wiecha P">Peter Wiecha</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Saller, Kai" uniqKey="Saller K">Kai Saller</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Mayer, Benedikt" uniqKey="Mayer B">Benedikt Mayer</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Bichler, Max" uniqKey="Bichler M">Max Bichler</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Markus Christian, Amann" uniqKey="Markus Christian A">Amann Markus-Christian</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Finley, Jonathan J" uniqKey="Finley J">Jonathan J. Finley</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Abstreiter, Gerhard" uniqKey="Abstreiter G">Gerhard Abstreiter</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Institute for Advanced Study, Technische Universität München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>13 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName><orgName type="university">Université technique de Munich</orgName></affiliation></author><author><name sortKey="Koblmiiller, Gregor" uniqKey="Koblmiiller G">Gregor Koblmiiller</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>Garching, 85748</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0035687</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0035687 INIST</idno><idno type="RBID">Pascal:14-0035687</idno><idno type="wicri:Area/Main/Corpus">000209</idno><idno type="wicri:Area/Main/Repository">000D58</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Confinement</term><term>Core shell structure</term><term>Electronic properties</term><term>Energy gap</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Infrared spectra</term><term>Interfaces</term><term>Line broadening</term><term>Line widths</term><term>Luminescence</term><term>Mechanical properties</term><term>Nanophotonics</term><term>Nanostructured materials</term><term>Nanowires</term><term>Non radiative recombination</term><term>Optical properties</term><term>Phosphorus</term><term>Scanning transmission electron microscopy</term><term>Stress effects</term><term>Stress relaxation</term><term>Surface recombination</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Luminescence</term><term>Propriété optique</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Structure coeur couche</term><term>Nanofil</term><term>Nanomatériau</term><term>Bande interdite</term><term>Propriété électronique</term><term>Nanophotonique</term><term>Spectre IR</term><term>Recombinaison superficielle</term><term>Phosphore</term><term>Effet contrainte</term><term>Elargissement raie</term><term>Largeur raie</term><term>Mécanisme croissance</term><term>Microscopie électronique balayage transmission</term><term>Relaxation contrainte</term><term>Propriété mécanique</term><term>Confinement</term><term>Recombinaison non radiative</term><term>Interface</term><term>7867</term><term>8107V</term><term>8107B</term><term>7321</term><term>Structure coeur coque</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Phosphore</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising from nonradiative surface and Auger recombination. Here, we demonstrate up to ˜10<sup>2</sup> times enhancements of the emission intensities from InAs NWs by growing an InAsP shell to produce core-shell NWs. By systematically varying the thickness and phosphorus (P)-content of the InAsP shell, we demonstrate the ability to further tune the emission energy via large strain-induced peak shifts that already exceed > 100 meV at comparatively low fractional P-contents. Increasing the P-content is found to give rise to additional line width broadening due to asymmetric shell growth generated by a unique transition from {110}- to {112}-sidewall growth as confirmed by cross-sectional scanning transmission electron microscopy. The results also elucidate the detrimental effects of plastic strain relaxation on the emission characteristics, particularly in core-shell structures with very high P-content and shell thickness. Overall, our findings highlight that enhanced mid-infrared emission efficiencies with effective carrier confinement and suppression of nonradiative recombination are highly sensitive to the quality of the InAs-InAsP core-shell interface.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced Luminescence Properties of InAs-InAsP Core-Shell Nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>TREU (Julian)</s1></fA11><fA11 i1="02" i2="1"><s1>BORMANN (Michael)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHMEIDUCH (Hannes)</s1></fA11><fA11 i1="04" i2="1"><s1>DOBLINGER (Markus)</s1></fA11><fA11 i1="05" i2="1"><s1>MORKÖTTER (Stefanie)</s1></fA11><fA11 i1="06" i2="1"><s1>MATICH (Sonja)</s1></fA11><fA11 i1="07" i2="1"><s1>WIECHA (Peter)</s1></fA11><fA11 i1="08" i2="1"><s1>SALLER (Kai)</s1></fA11><fA11 i1="09" i2="1"><s1>MAYER (Benedikt)</s1></fA11><fA11 i1="10" i2="1"><s1>BICHLER (Max)</s1></fA11><fA11 i1="11" i2="1"><s1>MARKUS-CHRISTIAN (Amann)</s1></fA11><fA11 i1="12" i2="1"><s1>FINLEY (Jonathan J.)</s1></fA11><fA11 i1="13" i2="1"><s1>ABSTREITER (Gerhard)</s1></fA11><fA11 i1="14" i2="1"><s1>KOBLMIILLER (Gregor)</s1></fA11><fA14 i1="01"><s1>Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4</s1><s2>Garching, 85748</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemistry, Ludwig-Maximilians-Universität München</s1><s2>Munich 81377</s2><s3>DEU</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Institute for Advanced Study, Technische Universität München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>13 aut.</sZ></fA14><fA20><s1>6070-6077</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000500732540490</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>44 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0035687</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising from nonradiative surface and Auger recombination. Here, we demonstrate up to ˜10<sup>2</sup> times enhancements of the emission intensities from InAs NWs by growing an InAsP shell to produce core-shell NWs. By systematically varying the thickness and phosphorus (P)-content of the InAsP shell, we demonstrate the ability to further tune the emission energy via large strain-induced peak shifts that already exceed > 100 meV at comparatively low fractional P-contents. Increasing the P-content is found to give rise to additional line width broadening due to asymmetric shell growth generated by a unique transition from {110}- to {112}-sidewall growth as confirmed by cross-sectional scanning transmission electron microscopy. The results also elucidate the detrimental effects of plastic strain relaxation on the emission characteristics, particularly in core-shell structures with very high P-content and shell thickness. Overall, our findings highlight that enhanced mid-infrared emission efficiencies with effective carrier confinement and suppression of nonradiative recombination are highly sensitive to the quality of the InAs-InAsP core-shell interface.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C21</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Luminescence</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Luminescence</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Propriété optique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Optical properties</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Structure coeur couche</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Core shell structure</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanofil</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanowires</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Bande interdite</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Energy gap</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Electronic properties</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" 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